General-purpose switching and amplifier application. NPN TRANSISTOR FOR POWERFUL AF OUTPUT STAGES 2N3055 Hoja de datos, 2N3055 datasheet, Boca Semiconductor Corporation - COMPLEMENTARY SILICON POWER TRANSISTORS, Hoja Tcnica, 2N3055 pdf, dataark, wiki, arduino, regulador, amplificador, circuito. We include 3055 transistor datasheet, 2n3055 transistor circuits, 2n3055 equivalent circuits, and a list of applications of 2n3055. Features: DC Current Gain: hFE 20 70 IC 4A CollectorEmitter Saturation Voltage: VCE(sat) 1.1V (Max. The 2n3055 transistor limited circuit applications are because of the physical and technical features shown by 2n3055, in this article we explain detailed pieces of information of the 2n3055 transistor. Mouser offers inventory, pricing, & datasheets for 2N3055 Bipolar Transistors - BJT. 2N3055 Silicon NPN Power Transistor Audio Power Amp, Medium Speed Switch TO3 Type Package Description: The 2N3055 is a silicon NPN transistor in a TO3 type case designed for general purpose switching and amplifier applications. Trans GP BJT NPN 60V 15A 3-Pin(2+Tab) TO-3 Sleeve 2N3055 Bipolar Transistors - BJT are available at Mouser Electronics. 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS, 2N3055 datasheet, 2N3055 circuit, 2N3055 data sheet : MOTOROLA, alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors. 60V Vceo, 15.000A Ic, 5 hFEġ5 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTSġ5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS These devices can also be used in power switching circuits such as relay or solenoid drivers, dctodc converters, inverters, or for inductive loads requiring higher safe operating area than the.
Datasheet 2n3055 transistor iso#
2VCEO = 40V IC = 0.7A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26Ĭontinental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR TRANSISTOR 2N3053 / 2N3053ATO-39Metal Can PackageGeneral Purpose TransistorsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL 2N3053 2N3053A UNITCollector Emitter Voltage VCEO 40 60 VCollector Base Voltage VCBO 60 80 VEmitter Base Voltage VEBO 5.115.000W Power NPN Metal Can Transistor. High-Power Transistors These PowerBase complementary transistors are designed for high power audio, stepping motor and other linear applications. Description : The 2N3055 and MJ2955 are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case, designed for general purpose switching and. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. Function : Complementary power transistor. Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 2N3055 NPN MJ2955 PNP COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3055 and MJ2955 are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case, designed for general purpose switching and amplifier applications.